By Edited by Pietro VINCENZINI World Academy of Ceramics and National Research Council, Italy Co-edited by Kunihito KOUMOTO, Nagoya University, Japan Nicola ROMEO, University of Parma,
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Extra info for 5th FORUM ON NEW MATERIALS PART C Proceedings of the 5th Forum on New Materials, part of CIMTEC 2010-12 th International Ceramics Congress and 5th Forum on New Materials Montecatini Terme, Italy, June 13-18, 2010
Synchrotron x-ray radiation experiments were performed at the Advanced Photon Source at Argonne National Laboratory using beam lines 33 BM-C and 33-ID-D. 20 degrees) and scanning the detector in the a-b plane of the sample. A Cameca SX-50 or SX-100 Electron microprobe was used to obtain the composition of the films discussed in this paper. For each sample, 10 data points were collected on each sample and the results were averaged together to obtain the composition of the films. The films on a silicon substrate were analyzed using three different accelerating voltages (8, 12, and 16 kV), and the StrataGem software package was used to determine the composition of the films.
M. G. Pinsker ;“Electron diffraction study of the semiconducting compoubd AgTe2Tl”, Soviet Physics-Crystallography, translated from Kristallografiya 9(5),626 (1965). O. S. M. G. Pinsker, “Crystal Structure of Physics-Crystallography, translated from Kristallografiya 17(2),237 (1965). jp Keywords: higher manganese silicide, solid solution, thermoelectric properties, valence electron count. Abstract. A partially cobalt-substituted solid solution of Nowotny chimney-ladder phase, (Mn1-xCox)Si, has been prepared using a tetra-arc-type furnace and a subsequent annealing process.
The observed change in lattice parameters is almost identical to that of the Fe-substituted samples, indicating that the electron carriers are effectively introduced as in the case of the Fe-system. 06(1). However, all the samples are found to be p-type. Moreover, the observed thermoelectric properties are apparently different from those of the Fe-substituted samples. All the single-phase samples exhibit metallic behavior up to 600°C, without showing the bipolar diffusion effect of carriers. Such behavior is favorable to the thermoelectric materials because the occurrence of the bipolar diffusion effect decreases the absolute value of the Seebeck coefficient and increases the carrier contribution of the thermal conductivity simultaneously, resulting in the lowering of thermoelectric figure-of-merit.